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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Quantum imaging of current flow in graphene.
Jean-Philippe Tetienne1, Nikolai Dontschuk2, David A Broadway1
1Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia.
Quantum imaging noninvasively maps current flow in graphene, revealing submicrometer defects. This technique offers high-resolution insights into electronic transport in graphene and other 2D materials.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Technology
Background:
- Graphene exhibits unique electronic transport phenomena crucial for advanced devices.
- Traditional resistivity measurements lack spatial information vital for studying these phenomena.
- Understanding current flow in real-space is essential for characterizing graphene devices.
Purpose of the Study:
- To develop and demonstrate a noninvasive quantum imaging technique for visualizing current flow in graphene.
- To achieve high-resolution mapping of current density in various graphene structures.
- To investigate the impact of nanoscale defects on electronic transport in graphene.
Main Methods:
- Utilized an engineered array of atomic-sized quantum sensors in diamond.
- Mapped the vector magnetic field generated by current flow in graphene.
- Reconstructed the vector current density with submicrometer spatial resolution.
Main Results:
- Successfully imaged current flow in monolayer graphene, including monoribbons and junctions.
- Achieved spatial resolution at the diffraction limit.
- Detected strong spatial variations in current corresponding to physical defects at the submicrometer scale.
- Demonstrated projected sensitivity to currents as small as 1 μA.
Conclusions:
- Quantum imaging provides a powerful new tool for noninvasive, high-resolution analysis of electronic transport in graphene.
- The method reveals nanoscale defects influencing current flow, critical for device performance.
- This technique has broad applicability for studying emerging two-dimensional materials and thin-film systems.
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