Related Experiment Video
Updated: Mar 2, 2026

05:39
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
10.4K
Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
Artur Branny1, Santosh Kumar1, Raphaël Proux1
1Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, UK.
Nature Communications
|May 23, 2017
Summary
Researchers created a 2D lattice of quantum emitters in atomically thin semiconductors. This breakthrough uses nanoscale strain engineering for deterministic positioning, paving the way for scalable quantum photonics architectures.
Area of Science:
- Quantum photonics
- Materials science
- Nanotechnology
Background:
- Scalability in quantum photonics hinges on deterministic positioning of single quantum emitters.
- Existing platforms like diamond defects and quantum dots face challenges with coherence and optical quality.
- Layered transition metal dichalcogenide semiconductors present a promising avenue for scalable quantum architectures.
Purpose of the Study:
- To deterministically create a two-dimensional lattice of quantum emitters in atomically thin semiconductors.
- To leverage nanoscale strain engineering for precise emitter placement.
- To achieve high-purity single photon emission from engineered quantum emitters.
Main Methods:
- Utilizing nanoscale strain engineering to create point-like perturbations in mono- and bi-layer WSe2.
- Modifying the local band-gap through strain to funnel excitons.
- Developing strain-tuned quantum emitters for controlled single photon emission.
Main Results:
- Achieved deterministic creation of a two-dimensional lattice of quantum emitters.
- Demonstrated high-purity single photon emission from strain-tuned emitters.
- Obtained a mean positioning accuracy of 120±32 nm with near-unity emitter creation probability.
Conclusions:
- Nanoscale strain engineering enables deterministic positioning of quantum emitters in transition metal dichalcogenides.
- This method offers a scalable route for building quantum photonic devices.
- Further optimization of nanopillar dimensions can enhance positioning accuracy.
Related Concept Videos
Carrier Generation and Recombination
1.4K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.4K
Biasing of Metal-Semiconductor Junctions
717
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
717

