Thermoelectric quantum oscillations in ZrSiS.

Area of Science:

• Condensed Matter Physics
• Materials Science
• Quantum Materials

Background:

• Topological semimetals feature band crossings protected by topology.
• These materials have potential applications in spintronics, optoelectronics, quantum computing, and energy harvesting.
• ZrSiS is a candidate topological nodal-line semimetal.

Purpose of the Study:

• To investigate the thermoelectric power of single-crystalline ZrSiS.
• To probe quantum oscillations and electronic band structures in ZrSiS.
• To confirm the topological nature of ZrSiS and explore its properties.

Main Methods:

• Measurement of thermoelectric power in single-crystalline ZrSiS.
• Analysis of quantum oscillations at temperatures up to 100 K.
• Characterization of electronic band dispersion and Berry phase.

Main Results:

• Thermoelectric power measurements revealed multiple quantum oscillations in ZrSiS.
• Two distinct oscillations originated from 3D and 2D electronic bands.
• These bands exhibited linear dispersion and an additional Berry phase, consistent with non-trivial topology.

Conclusions:

• Thermoelectric power is a sensitive probe for studying topological semimetals like ZrSiS.
• The findings provide further insights into the electronic properties of ZrSiS.
• This study suggests a novel approach for investigating other topological semimetals.