Boosting Biexciton Collection Efficiency at Quantum Dot-Oxide Interfaces by Hole Localization at the Quantum Dot...

Harvesting multiexcitons from semiconductor quantum dots (QDs) has been proposed as a path toward photovoltaic efficiencies beyond the Shockley-Queisser limit. Although multiexciton generation efficiencies have been quantified extensively in QD structures, the challenge of actually collecting multiple excitons at electrodes-a prerequisite for high-efficiency solar cell devices-has received less attention. Here, we demonstrate that multiexciton collection (MEC) at the PbS QD/mesoporous SnO₂ interface can be boosted 5-fold from ∼15 to reach ∼80% quantum yield, by partial localization of holes in a QD molecular capping shell. The resulting weakened Coulombic interactions give rise to reduced Auger recombination rates within the molecularly capped QDs, so that biexciton Auger relaxation, competing with MEC, is strongly suppressed. These results not only highlight the importance of surface chemistry and energetics at QD/ligand interfaces for multiexciton extraction but also provide clear design principles for realizing the benefits of MEG in sensitized systems exploited in solar cells and fuel geometries.