Low-temperature, high-mobility, solution-processed metal oxide semiconductors fabricated with oxygen radical assisted...

In this report, a simple and general chemical route for fabricating MO semiconducting films at a relatively low temperature without any fuel additives or special annealing steps was demonstrated. The precursor, which consisted of perchlorate, nitrate, and water, is easily converted into In₂O₃ at an annealing temperature of 250 °C due to oxygen radical assisted decomposition and generation of a large amount of heat. It is found that perchlorate salt can decompose and form an oxide film with high quality at a lower temperature when assisted by nitrate salt. The optimized In₂O₃-TFT fabricated via this precursor exhibits a saturation mobility of 14.5 cm² V^-1 s^-1. Furthermore, this approach has been expanded to the fabrication of ZnO films and attained improved performance, indicating its universality.