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Capacitance-voltage characteristics of sub-nanometric Al2O3 / TiO2 laminates: dielectric and interface charge
Abdelkader Kahouli1, Marwa Ben Elbahri1, Oleg Lebedev1
1CRISMAT UMR6508 CNRS-ENSICAEN-Normandie Université, Caen, France.
Abstract:
Advanced amorphous sub-nanometric laminates based on TiO2 and Al2O3 were deposited by atomic layer deposition at low temperature. Low densities of 'slow' and 'fast' interface states are achieved with values of 3.96 · 1010 cm-2 and 4.85 · 10-9 eV-1 cm-2, respectively, by using a 40 nm laminate constituted of 0.7 nm TiO2 and 0.8 nm Al2O3. The sub-nanometric laminate shows a low hysteresis width of 20 mV due to the low oxide charge density of about 3.72 · 1011 cm-2. Interestingly, such properties are required for stable and reliable performance of MOS capacitors and transistor operation. Thus, decreasing the individual layer thickness to the sub-nanometric range and combining two dielectric materials with oppositely charged defects may play a major role in the electrical response, highly promising for the application in future micro and nano-electronics applications.
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