Modeling elastic anisotropy in strained heteroepitaxy

Gopal Krishna Dixit1, Madhav Ranganathan1

  • 1Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur 208016, India.

Summary

We model quantum dot growth in germanium on silicon using continuum equations. Elastic and surface energy anisotropies influence quantum dot shape and alignment during molecular beam epitaxy.

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