Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe₂ nanosheets

Area of Science:

• Materials Science
• Nanotechnology
• Solid-State Electronics

Background:

• Resistive switching memory devices offer promising non-volatile memory solutions.
• Molybdenum diselenide (MoSe2) is a layered material with potential electronic applications.
• Understanding the switching mechanisms in novel materials is crucial for device optimization.

Purpose of the Study:

• To synthesize hexagonal molybdenum diselenide (MoSe2) nanosheets.
• To investigate the resistive switching memory behavior of single MoSe2 nanosheets.
• To elucidate the conductive mechanism responsible for the observed memory characteristics.

Main Methods:

• Hydrothermal synthesis was employed to prepare hexagonal MoSe2 nanosheets.
• Fabrication of a memory device utilizing single MoSe2 nanosheets.
• Characterization of the device's resistive switching properties and conductive mechanism analysis.

Main Results:

• The MoSe2 nanosheets based memory device demonstrated reproducible and stable bipolar resistive switching.
• Analysis indicated that the memory behavior is governed by the formation and rupture of nanoscale silver (Ag) filaments within the MoSe2 nanosheets.
• The study successfully established a link between material structure and device performance.

Conclusions:

• Hexagonal MoSe2 nanosheets are a viable material for fabricating stable and reproducible resistive switching memory devices.
• The filamentary switching mechanism involving nanoscale Ag filaments provides a clear explanation for the observed memory effects.
• This research contributes to the development of advanced memory technologies based on transition metal dichalcogenides.