Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates

We present the first demonstration of arsenic-rich InAs_1-xP_x (0 ≤ x ≤ 0.33) nanowire arrays grown on InP (111)B substrates by catalyst-free selective-area metal-organic chemical vapor deposition. It is shown that by introducing a thin InAs seeding layer prior to the growth of the nanowire, an extremely high vertical yield is achieved by eliminating rotational twins between (111)A and (111)B crystal orientations. InAsP nanowire arrays show strong emission of photoluminescence (PL) at room temperature, suggesting a significant reduction of surface state density compared with InAs nanowires. The phosphorus composition deduced from the PL peak energy is verified by energy-dispersive X-ray spectroscopy. The growth temperature shows a strong impact on the aspect ratio of InAs_1-xP_x nanowires with different phosphorus compositions. In addition, no PL emission is observed from nanowires grown with arsenic overpressure, likely due to an exchange of phosphorus with arsenic atoms at the surface which results in an increase in the surface state density. These results provide a path for the growth of heterojunctions based on As-rich InAs_1-xP_x for nanoscale short-wavelength infrared and mid-wavelength infrared optical devices.