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Updated: Feb 28, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Shiyong Wang1, Neerav Kharche2, Eduardo Costa Girão3
1Empa, Swiss Federal Laboratories for Materials Science and Technology , Überlandstrasse 129, CH-8600 Dübendorf, Switzerland.
Researchers fabricated tunable graphene quantum dots (GQDs) using precise edge fusion. This method allows for significant tuning of GQD electronic properties, opening doors for advanced electronic and optoelectronic devices.
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