Related Experiment Video
Updated: Feb 28, 2026

Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light
Published on: September 12, 2014
Consequences of changes in the ZnO trap distribution on the performance of dye-sensitized solar cells
J Falgenhauer1, F Fiehler, C Richter
1Institute of Applied Physics, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Gießen, Germany. schlettwein@uni-giessen.de.
Abstract:
The well-established indoline dye D149 and three indoline dyes with improved binding stability (DN91, DN216 and DN285) were used as sensitizers for electrodeposited porous ZnO and studied in dye-sensitized solar cells and showed very similar cell characteristics. After storage of the cells in the dark for four weeks, an increase in short-circuit current density was observed. Electrochemical impedance spectroscopy served to detect a shift of the conduction band edge energy to lower energies and, hence, an increased injection efficiency of electrons from the excited state of the sensitizer to the ZnO conduction band is detected as the main cause of this change. Additional photoelectrochemical experiments at different illumination intensities, intensity modulated photocurrent and photovoltage spectroscopy (IMPS and IMVS), transient photocurrent measurements, as well as measurements of the open-circuit photovoltage decay (OCVD) were performed to confirm this conclusion and, further, to prove a reduced rate of recombination for these injected electrons which prevented a corresponding decrease in the open-circuit voltage for many cells, frequently observed earlier. It is therefore shown how the long-term stability of ZnO-based DSSCs can be improved.
More Related Videos
09:32Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells
Published on: April 25, 2018
08:14Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO
Published on: July 31, 2016