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Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Biasing of FET01:22

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Characteristics of MOSFET01:17

Characteristics of MOSFET

1.1K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene.

Sameer Grover1, Anupama Joshi1,2, Ashwin Tulapurkar2

  • 1Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai, 400005, India.

Scientific Reports
|June 15, 2017
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Researchers created an abrupt graphene p-n junction using dual gating for optoelectronics. This device exhibits a unique photovoltage pattern at low temperatures, driven by the photothermoelectric effect and supercollision scattering.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene's unique electronic properties make it suitable for optoelectronic devices.
  • Fabricating controlled p-n junctions in graphene is crucial for advanced electronic applications.
  • Previous methods often resulted in graded junctions, limiting device performance.

Purpose of the Study:

  • To develop a novel method for creating abrupt p-n junctions in bilayer graphene FETs.
  • To investigate the photovoltage characteristics of these junctions at low temperatures.
  • To explore the underlying physical mechanisms responsible for the observed photovoltage.

Main Methods:

  • Fabrication of a double gated bilayer graphene field-effect transistor (FET).
  • Utilized a combination of electrostatic and electrolytic gating to form an abrupt p-n junction.
  • Measured photovoltage at low temperatures with a frozen electrolyte.

Main Results:

  • Confirmed the formation of an abrupt p-n junction via two Dirac peaks in the gating curve.
  • Observed a six-fold pattern in photovoltage at low temperatures, indicating the photothermoelectric effect.
  • Photovoltage increased with decreasing temperature, suggesting dominant supercollision scattering.

Conclusions:

  • The developed dual-gating technique successfully creates abrupt graphene p-n junctions.
  • The photothermoelectric effect and supercollision scattering play significant roles in the device's photoresponse.
  • This technique is extendable to other 2D materials for large-area superlattice p-n junctions with enhanced photoresponse.