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UV-Sintered Low-Temperature Solution-Processed SnO2 as Robust Electron Transport Layer for Efficient Planar
Like Huang1, Xiaoxiang Sun1, Chang Li1
1College of Electronic Information and Optical Engineering, Nankai University, The Tianjin Key Laboratory for Optical-Electronics Thin Film Devices and Technology , Tianjin 300071, China.
Abstract:
Recently, low temperature solution-processed tin oxide (SnO2) as a versatile electron transport layer (ETL) for efficient and robust planar heterojunction (PH) perovskite solar cells (PSCs) has attracted particular attention due to its outstanding properties such as high optical transparency, high electron mobility, and suitable band alignment. However, for most of the reported works, an annealing temperature of 180 °C is generally required. This temperature is reluctantly considered to be a low temperature, especially with respect to the flexible application where 180 °C is still too high for the polyethylene terephthalate flexible substrate to bear. In this contribution, low temperature (about 70 °C) UV/ozone treatment was applied to in situ synthesis of SnO2 films deposited on the fluorine-doped tin oxide substrate as ETL. This method is a facile photochemical treatment which is simple to operate and can easily eliminate the organic components. Accordingly, PH PSCs with UV-sintered SnO2 films as ETL were successfully fabricated for the first time. The device exhibited excellent photovoltaic performance as high as 16.21%, which is even higher than the value (11.49%) reported for a counterpart device with solution-processed and high temperature annealed SnO2 films as ETL. These low temperature solution-processed and UV-sintered SnO2 films are suitable for the low-cost, large yield solution process on a flexible substrate for optoelectronic devices.
