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Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy
N Domingo1, S Farokhipoor2, J Santiso1
1ICN2-Institut Catala de Nanociencia i Nanotecnologia, CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain.
Summary
Researchers measured magnetotransport in multiferroic BiFeO3 domain walls. They found anisotropic magnetoresistance, indicating domain wall properties are sensitive to magnetic field orientation.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Multiferroics
Background:
- Multiferroic materials like BiFeO3 exhibit complex magnetic and electric properties.
- Domain walls in these materials are crucial for their functionality.
- Understanding domain wall magnetotransport is key to novel electronic applications.
Purpose of the Study:
- To investigate the magnetotransport properties of individual domain walls in multiferroic BiFeO3.
- To determine the influence of external magnetic fields on domain wall conductivity.
- To explore anisotropic magnetoresistance at the nanoscale.
Main Methods:
- Utilized conductive-atomic force microscopy (C-AFM) to probe individual domain walls.
- Applied magnetic fields up to one Tesla during measurements.
- Analyzed magnetotransport data at room temperature.
Main Results:
- Observed anisotropic magnetoresistance in individual 71° domain walls.
- Demonstrated that magnetoresistance sign depends on magnetic field and domain wall plane orientation.
- Individual domain wall magnetoresistance can be underestimated in bulk measurements.
Conclusions:
- Individual domain walls in multiferroic BiFeO3 exhibit significant anisotropic magnetoresistance.
- The orientation-dependent nature of magnetoresistance highlights the importance of nanoscale characterization.
- Future devices could leverage this anisotropy for tailored electronic responses.
