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Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane
L Z Zhang1,2, F Zhai3, Kyung-Hwan Jin2
1Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China , Chengdu 610054, China.
Nano Letters
|June 20, 2017
Summary
We predict quantum spin Hall effects and tunable spin transport in As-graphane nanoribbons. Mechanical bending of these nanoribbons enables controllable spin transport for future spintronics applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Spintronics aims to utilize electron spin for information processing.
- Tunable spin transport in nanodevices is crucial for advancing spintronics.
- As-graphane offers a novel material platform for exploring quantum phenomena.
Purpose of the Study:
- To predict the existence of quantum spin Hall effects in As-graphane.
- To investigate tunable spin transport properties in As-graphane nanoribbons.
- To explore the impact of mechanical bending on spin transport.
Main Methods:
- First-principle density functional theory (DFT) calculations.
- Tight-binding (TB) calculations.
- Analysis of self-bending and stress-induced effects in nanoribbons.
Main Results:
- Existence of quantum spin Hall effects in As-graphane predicted.
- Monolayer As-graphane nanoribbons exhibit self-bending due to surface strain.
- Naturally curved nanoribbons show distinct spin transport properties compared to flat ones.
- Tunable spin transport achieved in curved As-graphane nanoribbon arrays under external stress.
Conclusions:
- As-graphane is a two-dimensional topological insulator.
- Mechanical bending induces spin flips, enabling tunable spin transport.
- Promising applications for future nanospintronics devices.
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