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Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane.

L Z Zhang1,2, F Zhai3, Kyung-Hwan Jin2

  • 1Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China , Chengdu 610054, China.

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|June 20, 2017
PubMed
Summary

We predict quantum spin Hall effects and tunable spin transport in As-graphane nanoribbons. Mechanical bending of these nanoribbons enables controllable spin transport for future spintronics applications.

Keywords:
Topological insulatorfirst-principles calculationsgraphanetunable spin transport

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Spintronics aims to utilize electron spin for information processing.
  • Tunable spin transport in nanodevices is crucial for advancing spintronics.
  • As-graphane offers a novel material platform for exploring quantum phenomena.

Purpose of the Study:

  • To predict the existence of quantum spin Hall effects in As-graphane.
  • To investigate tunable spin transport properties in As-graphane nanoribbons.
  • To explore the impact of mechanical bending on spin transport.

Main Methods:

  • First-principle density functional theory (DFT) calculations.
  • Tight-binding (TB) calculations.
  • Analysis of self-bending and stress-induced effects in nanoribbons.

Main Results:

  • Existence of quantum spin Hall effects in As-graphane predicted.
  • Monolayer As-graphane nanoribbons exhibit self-bending due to surface strain.
  • Naturally curved nanoribbons show distinct spin transport properties compared to flat ones.
  • Tunable spin transport achieved in curved As-graphane nanoribbon arrays under external stress.

Conclusions:

  • As-graphane is a two-dimensional topological insulator.
  • Mechanical bending induces spin flips, enabling tunable spin transport.
  • Promising applications for future nanospintronics devices.