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Related Concept Videos

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Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
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Related Experiment Video

Updated: Feb 28, 2026

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
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Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

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Multiple magnetoelectric coupling effect in BaTiO3/Sr2CoMoO6 heterostructures.

Chang Liu1,2, Wenhui Wan1, Sai Gong1

  • 1School of Physics, Beijing Institute of Technology, Beijing, 100081, China.

Scientific Reports
|June 22, 2017
PubMed
Summary
This summary is machine-generated.

Controlling magnetism with electric fields is key for future storage. This study shows a hybrid heterostructure of Sr2CoMoO6 and BaTiO3 can switch magnetic properties, enabling new spintronic devices.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Solid State Chemistry

Background:

  • Advanced storage devices require precise control of magnetism via electric fields.
  • Magnetoelectric coupling in materials is crucial for developing such technologies.
  • Double perovskite Sr2CoMoO6 (SCMO) and ferroelectric BaTiO3 (BTO) are promising candidates.

Purpose of the Study:

  • Investigate the electronic and magnetic properties of SCMO/BTO heterostructures.
  • Explore the impact of ferroelectric polarization on SCMO's magnetic and electronic states.
  • Identify potential for novel magnetoelectric effects.

Main Methods:

  • First-principles calculations were employed.
  • Electronic and magnetic properties were systematically studied.
  • Analysis focused on SCMO/BTO heterostructures with varying BTO polarization states.

Main Results:

  • Introducing ferroelectric states in BTO induced a transition in SCMO from antiferromagnetic semiconductor to half-metal.
  • Altering BTO polarization controlled interfacial magnetic moments.
  • Polarization changes affected the orbital occupancy of Co-3d states.

Conclusions:

  • The SCMO/BTO heterostructure exhibits multiple magnetoelectric coupling.
  • This coupling offers a pathway for designing spintronic and microelectronic devices.
  • Controllable interfacial electron degrees of freedom are achievable in these heterostructures.