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Updated: Feb 27, 2026

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Novel Metal-Insulator Transition at the SmTiO_{3}/SrTiO_{3} Interface
Kaveh Ahadi1, Susanne Stemmer1
1Materials Department, University of California, Santa Barbara, California 93106-5050, USA.
Abstract:
We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO_{3}/SrTiO_{3} interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more than an order of magnitude. The temperature of the transition systematically depends on the carrier density, which is tuned from ∼1×10^{14} to 3×10^{14} cm^{-2} by changing the SmTiO_{3} thickness. An analysis of the transport properties shows non-Fermi-liquid behavior and mass enhancement as the carrier density is lowered. We compare the MIT characteristics with those of known MITs in other material systems and show that they are distinctly different in several aspects. We tentatively conclude that both long-range Coulomb interactions and the fixed charge at the polar interface are likely to play a role in this MIT. The strong dependence on the carrier density makes this MIT of interest for field-tunable devices.
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