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Updated: Feb 27, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics.

Seongsu Kim1, Tae Yun Kim2, Kang Hyuck Lee1

  • 1School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746, Republic of Korea.

Nature Communications
|June 27, 2017
PubMed
Summary

We introduce tunnelling triboelectrification to control charges in 2D materials. This method allows creating, modifying, and erasing electronic regions on demand, enabling dynamic 2D electronics.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Electrostatic gates are crucial for controlling charges in 2D materials.
  • Current methods require complex fabrication of insulators and conductors, and gates are fixed post-manufacturing.

Purpose of the Study:

  • To develop a novel method for localizing and controlling electric charges in 2D materials.
  • To demonstrate a dynamic and rewritable approach for creating electronic regions in 2D systems.

Main Methods:

  • Utilizing triboelectric charges generated by friction with an atomic force microscope tip.
  • Injecting charges through defects in graphene on a SiO2/Si substrate to create 'ghost floating gates' via tunnelling triboelectrification.
  • Achieving high spatial resolution for charge localization.

Main Results:

  • Demonstrated the creation, modification, and erasure of p and n regions in graphene with atomic force microscope resolution.
  • Fabricated rewritable p/n+ and p/p+ junctions with feature sizes as small as 200 nm.
  • Showcased the potential for dynamic control over electronic properties.

Conclusions:

  • Tunnelling triboelectrification offers a unique, on-demand method for defining electronic regions in 2D materials.
  • This technique paves the way for time-variant 2D electronics with adaptable conductors and doped regions.