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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Yuqiang Ma1, Chenfei Shen1, Anyi Zhang1

  • 1Department of Electrical Engineering, University of Southern California , 3710 McClintock Avenue, Los Angeles, California 90089-0271, United States.

ACS Nano
|June 28, 2017
PubMed
Summary
This summary is machine-generated.

Researchers improved black phosphorus (BP) field-effect transistors (FETs) by tuning palladium (Pd) contacts with hydrogen. This significantly reduced contact resistance and doubled transconductance, enhancing BP

Keywords:
black phosphoruscontact resistancefield-effect transistorlayered materialphosphorenetwo-dimensional materials

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Black phosphorus (BP) is a promising 2D material for advanced electronics due to its high carrier mobility and direct band gap.
  • Achieving ultralow contact resistance is crucial for high-performance, scaled 2D field-effect transistors (FETs).

Purpose of the Study:

  • To investigate the impact of work function tunable metal contacts on the performance of BP FETs.
  • To demonstrate a method for reducing Schottky barrier height and contact resistance in BP FETs.

Main Methods:

  • Utilized palladium (Pd) as a contact material for BP FETs.
  • Employed the reaction between Pd and hydrogen (H2) to form a Pd-H alloy, tuning the work function.
  • Experimentally measured contact resistance (Rc) and transconductance.

Main Results:

  • Forming a Pd-H alloy significantly increased the work function of Pd contacts.
  • Reduced Schottky barrier height (ΦB) in BP FETs.
  • Achieved a substantial improvement in contact resistance (Rc) from ~7.10 to ~1.05 Ω·mm.
  • Doubled the transconductance of Pd-contacted BP FETs upon exposure to 5% hydrogen.

Conclusions:

  • Work function tuning of metal contacts is critical for optimizing BP FET performance.
  • The Pd-H alloy approach offers a viable strategy for achieving ultralow contact resistance in BP FETs.
  • This research highlights the potential of BP for next-generation electronic applications.