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Updated: Feb 27, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

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Published on: October 13, 2017

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots.

T Wang¹, T J Puchtler¹, T Zhu²

¹Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, UK.

|June 30, 2017

Summary

This summary is machine-generated.

Researchers developed solid-state single photon sources using semiconductor quantum dots. These sources offer polarization control and operate efficiently above the Peltier cooling limit, paving the way for advanced quantum technologies.

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Area of Science:

Quantum Optics
Materials Science
Solid-State Physics

Background:

Solid-state single photon sources are crucial for quantum technology applications.
Operating these sources above the Peltier cooling limit (200 K) is highly desirable for practical applications.
Existing sources often require cryogenic temperatures, limiting their widespread use.

Purpose of the Study:

To realize solid-state single photon sources with polarization control operating above 200 K.
To investigate the performance of these sources in terms of photon indistinguishability, polarization degree, and repetition rate.
To assess the temperature stability of these quantum dot-based sources.

Main Methods:

Utilized a non-polar Indium Gallium Nitride (InGaN) material system.
Fabricated semiconductor quantum dots using a simple planar epitaxial growth method.
Characterized single photon emission properties, including second-order coherence (g(2)(0)), polarization degree, and radiative lifetime.

Main Results:

Achieved single photon emission with g(2)(0) = 0.21, indicating high purity.
Demonstrated a high polarization degree of 0.80 with a fixed polarization axis.
Observed GHz repetition rates and a radiative lifetime of 357 ps at an operating temperature of 220 K.
Showcased temperature-insensitive performance of these properties.

Conclusions:

Fast, polarization-controlled single photon emission is achievable in solid-state quantum dots above the Peltier temperature threshold.
The developed InGaN quantum dot system offers a promising platform for on-chip quantum applications.
The simple fabrication and robust performance make these sources suitable for integrated quantum systems.