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Ferromagnetism and Half-Metallicity in Atomically Thin Holey Nitrogenated Graphene Based Systems
Indrani Choudhuri1, Biswarup Pathak1,2
1Discipline of Chemistry, Indian Institute of Technology (IIT) Indore, Indore M.P., 453552, India.
Summary
Researchers discovered a metal-free, half-metallic, holey nitrogenated graphene material. This carbon nitride system exhibits ferromagnetism and excellent properties, making it ideal for room-temperature spintronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Metal-free half-metallicity is crucial for advanced spintronic devices.
- Atomically thin materials offer unique electronic properties.
- Graphene-based materials are extensively researched for their potential in electronics.
Purpose of the Study:
- To investigate the spintronic potential of holey nitrogenated graphene (C2N) systems.
- To explore the possibility of achieving metal-free half-metallicity in C2N.
- To evaluate the properties of C-doped C2N for device applications.
Main Methods:
- Density Functional Theoretical (DFT) calculations were employed.
- Atomically thin holey nitrogenated graphene (C2N) structures were modeled.
- Electronic, magnetic, and mechanical properties were analyzed.
Main Results:
- Ferromagnetism was observed in all carbon-doped C2N systems.
- Strong half-metallicity was achieved at a specific C-doping concentration.
- A Curie temperature of approximately 297 K was determined, indicating room-temperature ferromagnetism.
- Excellent dynamical, thermal, and mechanical properties were predicted.
Conclusions:
- C-doped holey nitrogenated graphene (C2N) exhibits promising metal-free half-metallic ferromagnetism.
- This material is suitable for generating 100% spin-polarized currents.
- The predicted system is a viable candidate for room-temperature spintronic devices.
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