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Updated: Feb 26, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Spin-orbit interaction and Kondo scattering at the PrAlO3/SrTiO3 interface: effects of oxygen content
Shirin Mozaffari1, Samaresh Guchhait2, John T Markert1
1Department of Physics, The University of Texas at Austin, Austin, TX 78712, United States of America.
None:
We report the effects of oxygen pressure during growth ([Formula: see text]) on the electronic and magnetic properties of PrAlO3 films grown on [Formula: see text]-terminated SrTiO3 substrates. Resistivity measurements show an increase in the sheet resistance as [Formula: see text] is increased. The saturation of the sheet resistance down to 0.3 K is consistent with Kondo theory for [Formula: see text] torr. Resistivity data fits indicate Kondo temperatures of 16-18 K. For the [Formula: see text] sample, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields due to the Kondo effect. Analysis of the MR data permitted the extraction of the SO interaction critical field for the [Formula: see text] torr interface ([Formula: see text] T). We observed high positive MR for the least oxygenated sample, where a fraction of the n-type carriers are derived from oxygen vacancies and possible cation interdiffusion; for this [Formula: see text] torr sample, Hall effect data indicate a thick conducting layer. Its extremely high MR (∼[Formula: see text]) is attributed to classical behavior due to a distribution of mobilities.
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