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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Possible electric field induced indirect to direct band gap transition in MoSe2

B S Kim1,2,3, W S Kyung2,4, J J Seo2,5

  • 1Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.

Scientific Reports
|July 14, 2017
PubMed

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