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Published on: November 7, 2025
Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted
Xia Kong1, Xia Zhang1, Dameng Gao1
1Shandong Provincial Key Laboratory of Fluorine Chemistry and Chemical Materials , School of Chemistry and Chemical Engineering , University of Jinan , Jinan 250022 , China .
Abstract:
Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)8]Eu[Pc(ONh)8] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm2 V-1 s-1 for holes and electrons, respectively, under ambient conditions.

