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Structure and Bonding of Alkenes02:47

Structure and Bonding of Alkenes

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Olefins, which are unsaturated hydrocarbons containing one or more carbon–carbon double bonds, are broadly divided into alkenes and cycloalkenes. The general chemical formula of an alkene is CnH2n.
Doubly bonded carbons are sp2 hybridized and have a trigonal planar geometry. The double bond is composed of a σ bond formed by the overlap of hybrid orbitals and a π bond produced by the lateral overlap of unhybridized 2p orbitals on both the carbons. Each carbon atom is...
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Introduction:
In nature, compounds containing both carbon and hydrogen are known as "hydrocarbons". Aliphatic hydrocarbons are compounds whose molecules contain saturated single bonds (i.e., alkanes) or unsaturated double or triple bonds. Alkenes contain carbon–carbon double bonds and have a structural formula CnH2n. Unsaturated hydrocarbons containing carbon–carbon triple bonds are called "alkynes" and are structurally represented by the formula CnH2n-2.
The...
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Relative Stabilities of Alkenes01:59

Relative Stabilities of Alkenes

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The relative stability of alkenes can be determined by comparing their heats of hydrogenation. The lower heat of hydrogenation indicates the more stable alkene.  The three main factors determining the relative stability of alkenes are i) the number of substituents attached to the double-bond carbon atoms, ii) hyperconjugation, and iii) the stereochemistry of the double bond.
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Structure of Alkanes02:23

Structure of Alkanes

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The formation of carbon-carbon bonds leading to the creation of the carbon chain is the basis of organic chemistry. August Kekulé and Archibald Scott Couper independently developed this idea of carbon chain formation.
Hydrocarbons are the simplest organic compounds composed of carbons and hydrogens. Based on the bond order between carbons, the hydrocarbons are further classified into alkanes, alkenes, and alkynes. 
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Alkenes like 1-butene and 2-butene exhibit constitutional isomerism, as they differ in the position of the double bond. Further, 2-butene exhibits stereoisomerism and exists as two distinct compounds differing in spatial arrangement.
An isomer is called cis-2-butene when the methyl groups are on the same side of the double bond, and the other stereoisomer, in which methyl groups are on the opposite side of the double bond, is called trans-2-butene. The cis and trans stereoisomers are not...
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Physical Properties of Alkanes02:33

Physical Properties of Alkanes

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Alkanes are nonpolar molecules due to the presence of only carbon and hydrogen atoms. The electronegativity difference between carbon and hydrogen is minimal, and hence alkanes have a zero dipole moment. This leads to the presence of only dispersion forces between the molecules. The strength of dispersion forces is dependent on the surface area of the molecules on which they act. Since the surface area increases with the molecular length for straight-chain alkanes, the dispersion forces also...
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Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.

Fabien C-P Massabuau1, Sneha L Rhode2, Matthew K Horton3

  • 1Department of Materials Science and Metallurgy, University of Cambridge , Cambridge CB3 0FS, United Kingdom.

Nano Letters
|July 15, 2017
PubMed
Summary

Dislocations in Aluminum Gallium Nitride (AlGaN) show Ga and Al atom segregation, unlike Indium Gallium Nitride (InGaN). This difference explains why AlGaN devices are less resilient to dislocations than InGaN devices.

Keywords:
AlGaNInGaNaberration-corrected TEMcathodoluminescencedislocation

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Semiconductor Research

Background:

  • Dislocations in III-Nitride semiconductors significantly impact device performance.
  • Understanding dislocation behavior is crucial for developing reliable optoelectronic devices.

Purpose of the Study:

  • To investigate the atomic structure and properties of dislocations in Aluminum Gallium Nitride (AlGaN).
  • To compare dislocation behavior in AlGaN with that in Indium Gallium Nitride (InGaN).
  • To elucidate the reasons behind the differing resilience of AlGaN and InGaN devices to dislocations.

Main Methods:

  • Aberration-corrected scanning transmission electron microscopy (STEM).
  • Energy dispersive X-ray spectroscopy (EDX).
  • Cathodoluminescence (CL) imaging.

Main Results:

  • The core configuration of dislocations in AlGaN is similar to other III-Nitrides.
  • Alloying impedes the dissociation of mixed-type dislocations in AlGaN due to Ga and Al atom segregation.
  • Atom segregation at dislocations in AlGaN does not significantly affect cathodoluminescence intensity.
  • In contrast, atom segregation in InGaN dislocations leads to carrier localization and reduced non-radiative recombination.

Conclusions:

  • Ga and Al atom segregation at dislocations in AlGaN do not limit non-radiative recombination.
  • The distinct behavior of dislocations in AlGaN compared to InGaN explains the superior resilience of InGaN-based devices.
  • This research provides insights into the fundamental differences affecting device performance in III-Nitride semiconductors.