Native point defects on hydrogen-passivated 4H-SiC (0001) surface and the effects on metal adsorptions

With the continued expansion of silicon carbide's (SiC) applications, atomistic understanding on the native point defects of its surfaces, particularly on those of the hydrogen-passivated (HP) 4H-SiC (0001) surface, becomes imperative. Using first-principles calculations, the structures and formation energies of several typical native point defects (e.g., I_Si, I_C, V_Si, V_C, and Si_C) on the (0001) HP-surface of 4H-SiC were systematically explored, including the effects of the unit cell size, environmental condition, charge state, and hydrogen incorporation. Furthermore, their adsorptions of Ag (Mo) atom on these defective sites were systematically investigated. The formation energies of these defects in the HP-surface, clean surface, and bulk SiC were concluded together with their thermodynamic concentrations in the HP-surface estimated. The influences of these defects to metal (Ag, Mo) adsorptions of HP-surfaces were concluded. Based on these conclusions, the wettability improvement between the metal liquid and ion (Ag or Mo) implanted SiC substrates in the previous studies can be well understood at the atomistic scale. This study provides a theoretical guideline to SiC surface modification for the production of metal-SiC composites, brazing of SiC with metals, fabrication of electronic devices, or the growth of two dimensional nanofilms.