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Updated: Feb 26, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor

Xiao Yan1, Chunsen Liu1, Chao Li1

  • 1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.

Small (Weinheim an Der Bergstrasse, Germany)
|July 18, 2017
PubMed
Summary

This study introduces SnSe2/WSe2 2D heterostructures for tunneling field-effect transistors. These devices exhibit tunable band alignment, enabling rectifier diode or transistor operation with high performance for low-power electronics.

Keywords:
pn diodetunneling field effect transistorvan der Waals heterostructures

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