Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Developmental effect modification of DEHP exposure and serum testosterone levels in a Taiwanese population-based cohort.

Environmental pollution (Barking, Essex : 1987)·2026
Same author

Enhancing Model Generalizability in Medical Artificial Intelligence: Systematic Comparison of Categorical Encoding and Sampling Techniques for Imbalanced Data.

JMIR medical informatics·2026
Same author

Suppressing mode partition noise in multimode VCSELs via lateral geometry control.

Optics express·2026
Same author

Defect Reduction in HEMT Epilayers on SiC Meta-Substrates.

Nanomaterials (Basel, Switzerland)·2026
Same author

Machine Learning in Predicting Cardiac Events for ESRD Patients: A Framework for Clinical Decision Support.

Diagnostics (Basel, Switzerland)·2025
Same author

High-efficiency 1.55-µm DFB laser with a 600-µm short cavity and sub-20-kHz linewidth.

Optics letters·2025

Related Experiment Video

Updated: Feb 26, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
10:25

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Published on: September 14, 2018

10.7K

A comprehensive model for sub-10 nm electron-beam patterning through the short-time and cold development.

Li-Cheng Chang1, Chun Nien1, Jia-Hao Ye2

  • 1Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China.

Nanotechnology
|July 18, 2017
PubMed
Summary

This study models electron-beam lithography using single-spot experiments, achieving 8 nm groove widths by controlling development. Researchers demonstrated precise patterning, crucial for advanced microfabrication and nanotechnology applications.

More Related Videos

Fabrication of Micro-Patterned Chip with Controlled Thickness for High-Throughput Cryogenic Electron Microscopy
07:20

Fabrication of Micro-Patterned Chip with Controlled Thickness for High-Throughput Cryogenic Electron Microscopy

Published on: April 21, 2022

3.1K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Related Experiment Videos

Last Updated: Feb 26, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
10:25

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Published on: September 14, 2018

10.7K
Fabrication of Micro-Patterned Chip with Controlled Thickness for High-Throughput Cryogenic Electron Microscopy
07:20

Fabrication of Micro-Patterned Chip with Controlled Thickness for High-Throughput Cryogenic Electron Microscopy

Published on: April 21, 2022

3.1K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Area of Science:

  • Nanotechnology
  • Materials Science
  • Physics

Background:

  • Electron-beam lithography (EBL) is vital for fabricating nanoscale features.
  • Understanding the interplay between electron beam parameters, resist properties, and development conditions is crucial for optimizing EBL processes.
  • Existing models may not fully capture the nuances of initial development stages and proximity effects at ultra-low temperatures.

Purpose of the Study:

  • To develop a comprehensive model for electron-beam lithography based on single-spot experiments.
  • To investigate the relationship between incident electrons, resist materials, and development conditions (time, temperature).
  • To achieve ultra-narrow groove widths and dense patterns by mitigating proximity effects.

Main Methods:

  • Conducting single-spot experiments to model electron-beam lithography.
  • Varying development durations and temperatures.
  • Analyzing the point spread function (PSF) and characteristic region of incident spots.
  • Fabricating single lines and dense arrays using optimized parameters.

Main Results:

  • Established a comprehensive EBL model correlating electron beam, resist, and development parameters.
  • Achieved 8 nm groove width for single lines by controlling development at low temperatures.
  • Demonstrated dense arrays with 9 nm groove width and 30 nm pitch using optimized EBL conditions.
  • Observed and validated a singular point at the onset of the development process.

Conclusions:

  • Single-spot experiments provide a robust method for modeling and optimizing electron-beam lithography.
  • Precise control over development conditions, especially at low temperatures, effectively suppresses proximity effects.
  • The developed methodology enables the fabrication of ultra-high-resolution patterns essential for advanced nanotechnology.