Self-Registered Self-Assembly of Block Copolymers

Directed self-assembly (DSA) of block copolymer (BCP) thin films, especially with density multiplication, is one of the most promising options for further improving resolution and throughput in nanolithography. However, controlling defect density has been one of the major hurdles for many DSA applications. Both thermodynamically and kinetically, defect-free patterns favor the use of low density multiplication factors and thinner films, which undermine the promise of enhanced resolution and the formation of robust masks for pattern transfer. Here, we demonstrate a self-registered self-assembly method to enable nearly perfect DSA on loosely defined chemical patterns with high density multiplication factor. Self-registered self-assembly involves two DSA steps. In the first step, an ultrathin BCP blend film is used to obtain vanishingly low defect densities. Concurrently as the film is annealed, preloaded chemical markers separate into the different polymer blocks and graft to the substrate locking in a new chemical contrast pattern with 1:1 feature registration. After thorough removal of the blend film, the remaining self-registered chemical pattern can establish defect-free DSA of thick BCP films.