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High performance top-gated multilayer WSe2 field effect transistors.

Pushpa Raj Pudasaini1, Michael G Stanford1, Akinola Oyedele2

  • 1Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, United States of America.

Nanotechnology
|July 19, 2017
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Summary

High-performance top-gated tungsten diselenide (WSe2) field-effect transistors (FETs) were fabricated using a novel two-step remote plasma-assisted atomic layer deposition (ALD) process. This method achieves excellent device characteristics for optoelectronic applications.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Tungsten diselenide (WSe2) is a promising 2D material for next-generation electronic and optoelectronic devices.
  • Developing high-quality gate dielectrics is crucial for realizing high-performance WSe2 field-effect transistors (FETs).
  • Existing fabrication methods often face challenges with leakage currents and surface doping effects.

Purpose of the Study:

  • To demonstrate high-performance top-gated WSe2 FET devices.
  • To develop a reliable fabrication process for WSe2 FETs using remote plasma-assisted atomic layer deposition (ALD).
  • To investigate the impact of a titanium buffer layer on device performance.

Main Methods:

  • Fabrication of top-gated WSe2 FETs using a two-step remote plasma-assisted ALD process.
  • Deposition of aluminum oxide (Al2O3) gate dielectric layers with a titanium (Ti) buffer layer on WSe2 channels.
  • Utilizing a two-temperature deposition strategy for the Al2O3 layer (50 °C for initial nm, 150 °C for the remainder).

Main Results:

  • Achieved high-quality, low-leakage Al2O3 gate dielectric layers on WSe2.
  • Mitigated oxygen plasma-induced doping effects using an ultrathin Ti buffer layer.
  • Demonstrated excellent device characteristics with a current on/off ratio exceeding 10^6 and field-effect mobility up to 70.1 cm^2 V^-1 s^-1.

Conclusions:

  • The developed two-step remote plasma-assisted ALD process with a Ti buffer layer is effective for fabricating high-performance top-gated WSe2 FETs.
  • This fabrication method shows significant potential for realizing advanced WSe2-based optoelectronic devices.
  • Further optimization could lead to even greater improvements in device performance.