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High-performance electronic transport in the plane of 3D type-II Dirac semimetals
Yanfeng Ge1, Wenhui Wan2, Yong Liu1
1State Key Laboratory of Metastable Materials Science and Technology & Hebei Key Laboratory of Microstructure Material Physics, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China.
Abstract:
Recently, the type-II Dirac fermion, a new topological state, has been proposed in the Al3V family. It breaks Lorentz symmetry and has unique physical properties. We use first-principles calculations to investigate electronic transport limited by phonon scattering. The electronic resistivity in the xy plane is estimated to be 24.1 [Formula: see text] cm for Al3V and is much lower than that along the z direction. The heavy electronic effective mass along the z direction and the main electron-phonon coupling, originating from the phonon modes vibrating along the z direction, lead to anisotropic electronic transport, which is also found in other members of the Al3V family.
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