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Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

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Updated: Feb 25, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Electronic components embedded in a single graphene nanoribbon.

P H Jacobse¹, A Kimouche², T Gebraad³

¹Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, Utrecht, 3508 TA, The Netherlands.

Nature Communications

|July 27, 2017

Summary

Researchers created functional electronic components within single graphene nanoribbons using on-surface synthesis. This breakthrough enables metal-semiconductor junctions and tunnel barriers for advanced graphene nanoribbon electronics.

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Last Updated: Feb 25, 2026

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Graphene's lack of a natural band gap limits its use in electronics.
Graphene nanoribbons (GNRs) offer a solution by introducing a band gap.
On-surface synthesis enables precise fabrication of GNRs with tailored properties.

Purpose of the Study:

To integrate functional electronic components directly into single GNRs.
To create metal-semiconductor junctions and tunnel barriers within GNRs.
To advance the development of all-graphene electronic devices.

Main Methods:

On-surface synthesis of GNR heterostructures.
Atomic force microscopy (AFM) and scanning tunneling microscopy (STM) for structural characterization.
Conductance measurements, density functional theory (DFT), and transport calculations for electronic properties.

Main Results:

Fabrication of a single GNR with 5- and 7-atom wide segments.
Successful creation of a metal-semiconductor junction and a tunnel barrier within the GNR.
Atomic-scale geometry and electronic structure characterization confirmed the junction properties.

Conclusions:

On-surface synthesis provides precise control for building complex GNR structures.
The fabricated junctions are crucial for developing contacts in GNR devices.
This work represents a significant step towards realizing complete electronic devices within single GNRs.