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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Ivan Brihuega1, Felix Yndurain1
1Departamento de Física de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid , Cantoblanco, 28049 Madrid, Spain.
Atomic hydrogen preferentially chemisorbs on AA-stacked regions of rotated graphene bilayers. Doping and reduced rotation angles significantly enhance adsorption energy, with C-H bond energy impacting hydrogen and deuterium behavior.
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