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Electrical circuit model of ITO/AZO/Ge photodetector
Malkeshkumar Patel1, Joondong Kim1
1Photoelectric and Energy Device Applications Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772, Republic of Korea.
Abstract:
In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.
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