Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Inter-observer reliability of gastric ultrasound and level of agreement with clinical evaluation in adult patients requiring emergency surgery.

Revista espanola de anestesiologia y reanimacion·2026
Same author

A Python-based flow solver for numerical simulations using an immersed boundary method on single GPUs.

Computers & fluids·2026
Same author

Hemodynamics affects factor XI/XII anticoagulation efficacy in patient-derived left atrial models.

Computer methods and programs in biomedicine·2025
Same author

Effects and action mechanism of gonadotropins on ovarian follicular cells: A novel role of Sphingosine-1-Phosphate (S1P). A review.

General and comparative endocrinology·2024
Same author

Bilastine 0.6% Preservative-Free Eye Drops as an Effective Once-Daily Treatment for the Signs and Symptoms of Allergic Conjunctivitis: A Pooled Analysis of 2 Randomized Clinical Trials.

Journal of investigational allergology & clinical immunology·2023
Same author

Transanal full-thickness excision for rectal neoplasm: is it advisable to leave the defect open?

Langenbeck's archives of surgery·2023

Related Experiment Video

Updated: Feb 25, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.1K

Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process.

D González1, V Braza1, A D Utrilla2

  • 1University Research Institute on Electron Microscopy & Materials, (IMEYMAT) Universidad de Cádiz, E-11510 Puerto Real (Cádiz), Spain.

Nanotechnology
|August 4, 2017
PubMed
Summary

A new method quantifies indium arsenide (InAs) in wetting layers (WL) and quantum dots (QDs). Capping layer growth rates influence InAs distribution and QD properties, impacting optical characteristics.

More Related Videos

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

9.6K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K

Related Experiment Videos

Last Updated: Feb 25, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.1K
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

9.6K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Quantum dots (QDs) are crucial in optoelectronic devices.
  • Understanding the wetting layer (WL) and QD composition is vital for performance.
  • InAs/GaAs heterostructures are widely studied for their unique properties.

Purpose of the Study:

  • To develop a quantitative method for analyzing the InAs distribution between WL and QDs.
  • To investigate the impact of capping layer (CL) growth rates on QD decomposition and composition.
  • To determine the average Indium (In) content within QDs.

Main Methods:

  • Quantitative analysis of InAs in WL and QDs using statistical methods.
  • Calibration using strain and compositional mappings (ChemiSTEM) on WL structures.
  • High-resolution transmission electron microscopy (HR-TEM) and high-resolution X-ray diffraction (HR-XRD).

Main Results:

  • The area under average profiles from strain and compositional mappings effectively quantifies InAs in the WL.
  • Slower GaAs CL growth rates lead to In enrichment in the WL and reduced QD height.
  • Ga/In intermixing during QD decomposition significantly reduces QD height and In content.

Conclusions:

  • The developed procedure accurately quantifies InAs distribution in InAs/GaAs systems.
  • Capping layer growth rate is a critical parameter controlling QD properties and In content.
  • Understanding these compositional changes is key to tuning the optical properties of QDs.