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Carrier Compensation Induced by Thermal Annealing in Al-Doped ZnO Films

Takashi Koida1, Tetsuya Kaneko2,3, Hajime Shibata4

  • 1Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan. t-koida@aist.go.jp.

Materials (Basel, Switzerland)
|August 5, 2017
PubMed

Keywords:
ZnOcarrier compensationdopingmobilitytransparent conducting oxides

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