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Updated: Feb 25, 2026
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
All-Aluminum Thin Film Transistor Fabrication at Room Temperature
Rihui Yao1, Zeke Zheng2, Yong Zeng3
1State Key Laboratory of Luminescent Materialsand Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China. yaorihui@scut.edu.cn.
Abstract:
Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al₂O₃) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al₂O₃ heterojunction unit. The measurements of transmittance electronic microscopy (TEM) and X-ray reflectivity (XRR) revealed the smooth interfaces between ~2.2-nm-thick Al₂O₃ layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd) and pure Al, with Al₂O₃/AZO multilayered channel and AlO:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al₂O₃/AZO heterojunction units exhibited a mobility of 2.47 cm²/V·s and an Ion/Ioff ratio of 10⁶. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.
