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Enhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio

Zhipeng Wu1, Jun Zhu2

  • 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China. wuzhiroc@live.com.

Materials (Basel, Switzerland)
|August 5, 2017
PubMed

Keywords:
Hf0.5Zr0.5O2 thin filmsPLDRRAMresistive switching

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