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High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

Imas Noviyana1, Annisa Dwi Lestari2, Maryane Putri3

  • 1School of Materials Science and Engineering, Yeungnam University, Gyeongsan 38541, Korea. noviyanaimas@gmail.com.

Materials (Basel, Switzerland)
|August 5, 2017
PubMed

Keywords:
RF magnetron sputteringamorphous oxidehigh field effect mobilityindium zinc tin oxidethin film transistor

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