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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
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Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
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An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic

N F A Fattah1, H M Ng2, Y K Mahipal3

  • 1Centre for Ionics Universiti Malaya, Department of Physics, Faculty of Science, University of Malaya, Kuala Lumpur 50603, Malaysia. faiqahfattah@gmail.com.

Materials (Basel, Switzerland)
|August 5, 2017
PubMed
Summary

Graphene oxide enhances solid polymer electrolytes for better electrical double-layer capacitors. This graphene oxide-doped material shows improved ionic conductivity and excellent cyclic stability for energy storage applications.

Keywords:
copolymerelectrical double layer capacitorgraphene oxideionic liquid

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Area of Science:

  • Materials Science
  • Electrochemistry
  • Polymer Science

Background:

  • Solid polymer electrolytes (SPEs) are crucial for safe and efficient energy storage devices.
  • Poly (vinylidene fluoride-hexafluoropropylene) [P(VdF-HFP)] and 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl) imide [EMI-BTI] are common components in SPEs.
  • Enhancing ionic conductivity and electrochemical properties of SPEs remains a key challenge.

Purpose of the Study:

  • To investigate the effect of graphene oxide (GO) as a nano-filler in P(VdF-HFP)-[EMI-BTI] SPEs.
  • To evaluate the impact of GO doping on the ionic conductivity and electrochemical performance of electrical double-layer capacitors (EDLCs).
  • To explore the potential of GO-doped SPEs in advanced energy storage applications.

Main Methods:

  • Preparation of solid polymer electrolytes (SPEs) with varying concentrations of graphene oxide (GO).
  • Characterization of SPEs using X-ray diffraction (XRD) and thermogravimetric analysis (TGA) to confirm complexation.
  • Fabrication and electrochemical evaluation of EDLCs using GO-doped SPEs via cyclic voltammetry and charge-discharge techniques.

Main Results:

  • GO-doped SPEs exhibited significantly improved ionic conductivity compared to undoped SPEs, attributed to oxygen-containing functional groups on GO enhancing ion mobility.
  • The GO-doped SPE-based EDLC achieved a maximum specific capacitance of 29.6 F∙g⁻¹ at a scan rate of 3 mV/s (6 wt% GO).
  • The EDLC demonstrated excellent cyclic stability, retaining 94% of its performance after 3000 cycles.

Conclusions:

  • Graphene oxide doping effectively enhances the ionic conductivity and electrochemical performance of P(VdF-HFP)-[EMI-BTI] based SPEs.
  • The developed GO-doped SPEs show great promise for high-performance electrical double-layer capacitors.
  • This study highlights the significant role of GO in advancing energy storage technologies.