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Updated: Feb 25, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode
Wen-Chung Chang1, Sheng-Chien Su2, Chia-Ching Wu3
1Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan. changwc@stust.edu.tw.
Abstract:
Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current-voltage (I-V) measurements. Nonlinear and rectifying I-V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.
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