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Related Experiment Video

Updated: Feb 25, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

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Published on: December 7, 2017

Photon-triggered nanowire transistors.

Jungkil Kim¹, Hoo-Cheol Lee¹, Kyoung-Ho Kim¹

¹Department of Physics, Korea University, Seoul 02841, Republic of Korea.

Nature Nanotechnology

|August 9, 2017

Summary

This summary is machine-generated.

Researchers developed novel photon-triggered nanowire transistors and logic gates. These devices optically switch and amplify electronic currents without electrical gates, enabling new applications in electronics and photonics.

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Area of Science:

Photonics and Nanoelectronics
Optically triggered electronic devices

Background:

Photon-triggered electronic circuits are a long-standing goal in photonics.
Existing devices often require electrical gates or control photons with photons, not electronic currents.

Purpose of the Study:

To demonstrate photon-triggered nanowire (NW) transistors and logic gates.
To develop a single NW photodetection system.
To achieve optical switching and amplification of electronic currents without electrical gates.

Main Methods:

Synthesizing NWs with crystalline silicon (CSi) and porous silicon (PSi) segments.
Fabricating devices with electrical contacts on NWs and exposing PSi segments to light.
Utilizing localized pump lasers to demonstrate logic gates (AND, OR, NAND).

Main Results:

Achieved photon-triggered NW transistors with high on/off ratios (>8×10^6).
Demonstrated photon-triggered logic gates using independent optical input signals.
Developed a low-power (sub-300 pW) NW transistor and a submicrometre-resolution photodetection system.

Conclusions:

Photon-triggered transistors offer a new pathway for multifunctional devices.
These devices enable programmable logic elements and ultrasensitive photodetectors.
The developed technology advances the integration of optical control in electronic circuits.