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Updated: Feb 25, 2026

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

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Published on: December 27, 2012

Monolithic CMOS-compatible zero-index metamaterials.

Daryl I Vulis, Yang Li, Orad Reshef

|August 9, 2017

Summary

This summary is machine-generated.

We developed a zero-index metamaterial using silicon-on-insulator (SOI) technology, enabling CMOS compatibility for advanced integrated optics. This low-cost platform facilitates the mass adoption and exploration of novel photonic devices.

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Area of Science:

Photonics
Materials Science
Nanotechnology

Background:

Zero-index materials offer unique optical properties for integrated optics.
Compatibility with CMOS technology is crucial for practical applications.

Purpose of the Study:

To demonstrate a CMOS-compatible zero-index metamaterial.
To enable the exploration of zero-index photonic devices.

Main Methods:

Fabrication of a square array of air holes in a 220-nm-thick silicon-on-insulator (SOI) wafer.
Utilizing low-aspect-ratio structures for CMOS compatibility.

Main Results:

Demonstrated a zero-index metamaterial entirely composed of silicon.
Supported zero-index modes with Dirac-cone dispersion.
Achieved compatibility with standard CMOS fabrication processes.

Conclusions:

The developed silicon-based zero-index metamaterial is CMOS-compatible.
This platform allows for cost-effective, high-fidelity mass adoption and exploration of zero-index photonic devices.