Preparation and Optoelectronic Characteristics of ZnO/CuO-Cu₂O Complex Inverse Heterostructure with GaP Buffer for
Chih-Hung Hsu1, Lung-Chien Chen2, Yi-Feng Lin3
1Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei 106, Taiwan. bluerex6@ms35.hinet.net.
Abstract:
This study reports the optoelectronic characteristics of ZnO/GaP buffer/CuO-Cu₂O complex (COC) inverse heterostructure for solar cell applications. The GaP and COC layers were used as buffer and absorber in the cell structure, respectively. An energy gap widening effect and CuO whiskers were observed as the copper (Cu) layer was exerted under heat treatment for oxidation at 500 °C for 10 min, and arose from the center of the Cu₂O rods. For preparation of the 30 nm-thick GaP buffer by sputtering from GaP target, as the nitrogen gas flow rate increased from 0 to 2 sccm, the transmittance edge of the spectra demonstrated a blueshift form 2.24 to 3.25 eV. Therefore, the layer can be either GaP, GaNP, or GaN by changing the flow rate of nitrogen gas.
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