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Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology.

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    This summary is machine-generated.

    High-performance single-photon avalanche diodes (SPADs) were fabricated using standard 0.18-µm CMOS technology. These SPADs offer excellent performance metrics for diverse applications.

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    Area of Science:

    • Photonics and Semiconductor Devices
    • Integrated Circuit Design

    Background:

    • Single-photon avalanche diodes (SPADs) are crucial for detecting single photons.
    • Existing SPAD designs often require specialized fabrication processes, increasing costs.

    Purpose of the Study:

    • To design and fabricate high-performance SPADs using a readily available CMOS technology.
    • To achieve excellent device characteristics without custom process modifications.

    Main Methods:

    • Utilized a standard 0.18-µm high-voltage CMOS manufacturing process.
    • Designed and fabricated SPAD devices leveraging the existing technology platform.

    Main Results:

    • Achieved low dark-count rate, high photon-detection probability, and low afterpulsing.
    • Demonstrated acceptable timing jitter and breakdown voltage.
    • SPADs were fabricated without any technology customization.

    Conclusions:

    • The developed SPADs offer a compelling combination of high performance and low cost.
    • This design enables widespread adoption of advanced SPADs in various applications.