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Room temperature continuous wave quantum dot cascade laser emitting at 7.2 μm.

Ning Zhuo, Jin-Chuan Zhang, Feng-Jiao Wang

    Optics Express
    |August 10, 2017
    PubMed
    Summary

    We developed a novel quantum cascade laser using InAs quantum dots, achieving continuous wave room temperature lasing at 7.2 μm. This breakthrough offers improved performance for infrared laser applications.

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    Area of Science:

    • Semiconductor Lasers
    • Quantum Dot Technology
    • Mid-Infrared Photonics

    Background:

    • Quantum cascade lasers (QCLs) are crucial for mid-infrared applications.
    • Improving QCL performance, especially at room temperature, remains a key challenge.
    • Quantum dots offer unique electronic and optical properties for advanced laser designs.

    Purpose of the Study:

    • To demonstrate a novel quantum cascade laser (QCL) utilizing Indium Arsenide (InAs) quantum dots.
    • To achieve efficient continuous wave (CW) room temperature lasing at a 7.2 μm wavelength.
    • To investigate the underlying physics responsible for performance enhancements.

    Main Methods:

    • Fabrication of a QCL with active regions comprising InAs quantum dots on Gallium Arsenide (GaAs) buffer layers.
    • Integration of these quantum dots within Indium Gallium Arsenide (InGaAs) wells and Indium Aluminum Arsenide (InAlAs) barriers.
    • Characterization of laser performance under continuous wave (CW) and pulsed operational modes at various temperatures.

    Main Results:

    • Demonstrated CW room temperature lasing at 7.2 μm.
    • Achieved a low threshold current density of 1.89 kA/cm².
    • Observed lasing up to 110 °C in pulsed mode.
    • Formulated a theory attributing performance gains to weak localization of states.

    Conclusions:

    • The InAs quantum dot-based QCL design significantly enhances mid-infrared laser performance.
    • Weak localization of states is identified as a key factor for improved efficiency and operating temperature.
    • This work paves the way for next-generation mid-infrared semiconductor lasers.