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Whispering gallery mode lasing from InGaN/GaN quantum well microtube
Optics Express
|August 10, 2017
Summary
Researchers created InGaN/GaN quantum well microtubes using strain-induced self-rolling. These microtubes exhibit whispering-gallery modes and low-threshold stimulated emission, paving the way for novel optoelectronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Indium Gallium Nitride (InGaN) and Gallium Nitride (GaN) quantum wells are crucial for optoelectronic devices.
- Fabricating complex nanostructures from these materials presents significant challenges.
Purpose of the Study:
- To develop a novel method for fabricating InGaN/GaN quantum well microtubes.
- To investigate the optical properties of these self-rolled microtubes.
Main Methods:
- Fabrication of InGaN/GaN quantum wells heterostructure.
- Strain-induced self-rolling of nanomembranes.
- Selective release from substrate.
- Photoluminescence spectroscopy.
- Optical pumping experiments.
Main Results:
- Successfully fabricated freestanding InGaN/GaN quantum well microtubes (6 µm diameter, 50 nm wall thickness).
- Observed whispering-gallery modes resonance in photoluminescence spectra.
- Achieved stimulated emission with a low threshold of 415 kW/cm².
- Predominant TM polarization of stimulated emission parallel to the microtube axis.
Conclusions:
- Strain-induced self-rolling is an effective method for fabricating InGaN/GaN microtubes.
- These microtubes exhibit unique optical properties suitable for resonant cavities.
- The demonstrated low-threshold stimulated emission highlights their potential for optoelectronic applications.
