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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
320-nm Flexible Solution-Processed 2,7-dioctyl[1] benzothieno[3,2-b]benzothiophene Transistors
Hang Ren1, Qingxin Tang2, Yanhong Tong3
1Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China. renh221@nenu.edu.cn.
Abstract:
Flexible organic thin-film transistors (OTFTs) have received extensive attention due to their outstanding advantages such as light weight, low cost, flexibility, large-area fabrication, and compatibility with solution-processed techniques. However, compared with a rigid substrate, it still remains a challenge to obtain good device performance by directly depositing solution-processed organic semiconductors onto an ultrathin plastic substrate. In this work, ultrathin flexible OTFTs are successfully fabricated based on spin-coated 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) films. The resulting device thickness is only ~320 nm, so the device has the ability to adhere well to a three-dimension curved surface. The ultrathin C8-BTBT OTFTs exhibit a mobility as high as 4.36 cm² V-1 s-1 and an on/off current ratio of over 10⁶. These results indicate the substantial promise of our ultrathin flexible C8-BTBT OTFTs for next-generation flexible and conformal electronic devices.
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