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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

Yu-Hsien Lin1, Yi-He Tsai2, Chung-Chun Hsu3

  • 1Department of Electronic Engineering, National United University, Miaoli 36003, Taiwan. yhlin@nuu.edu.tw.

Materials (Basel, Switzerland)
|August 11, 2017
PubMed

Keywords:
NiSiGeSchottky junctiongermaniummicrowave annealing

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